IDENTIFICAZIONE ARMONICA DI STRUTTURE POLIFASI: IL MODELLO GEOMETRICO IN PRESENZA DI UN SISTEMA POLIFARE DI CORRENTI = L'IDENTIFICATION HARMONIQUE DES SYSTEMES POLYPHASES: LE MODELE GEOMETRIQUE POUR UN SYSTEME POLYPHASE DE COURANTSPESSINA G; ZIMAGLIA C.1981; ENERG. ELETTR.; ISSN 0013-7308; ITA; DA. 1981; VOL. 58; NO 10; PP. 407-414; ABS. FRE/ENG; BIBL. 7 REF.Article

IL PROCEDIMENTO DIAGNOSTICO IN RADIOLOGIA = PROCEDE DIAGNOSTIQUE EN RADIOLOGIEVIDAL B; PESSINA G.1975; RADIOL. MED.; ITAL.; DA. 1975; VOL. 61; NO 3; PP. 193-203; ABS. ANGL.; BIBL. 24 REF.Article

SULLO STUDIO DEI CONTENUTI ARMONICI DI F.M.M. DI AVVOLGIMENTI POLIFASI QUALSIASI. = ETUDE DES HARMONIQUES DE LA FORCE MAGNETO-MOTRICE, DANS LES ENROULEMENTS POLYPHASES QUELCONQUESPESSINA G; ZIMAGLIA C.1975; ALTA FREQ.; ITAL.; DA. 1975; VOL. 44; NO 7; PP. 354-359; BIBL. 7 REF.Article

IDENTIFICAZIONE ARMONICA DI STRUTTURE POLIFASI DI TIPO GENERALE: PERMUTAZIONI ARMONICHE MODELLI ELEMENTARI = L'IDENTIFICATION HARMONIQUE DES STRUCTURES POLYPHASEES DE TYPE GENERAL: LA PERMUTATION HARMONIQUE DES MODELES ELEMENTAIRESPESSINA G; ZIMAGLIA C.1982; ENERGIA ELETTRICA; ISSN 0013-7308; ITA; DA. 1982; NO 10; PP. 412-425Article

IDENTIFICAZIONE ARMONICA DI STRUTTURE POLIFASI: COSTRUZIONE DI UN MODELLO GEOMETRICO = L'IDENTIFICATION HARMONIQUE DES SYSTEMES POLYPHASES: CONSTRUCTION D'UN MODELE GEOMETRIQUEPESSINA G; ZIMAGLIA C.1981; ENERG. ELETTR.; ISSN 0013-7308; ITA; DA. 1981; VOL. 58; NO 10; PP. 397-406; ABS. FRE/ENG; BIBL. 10 REF.Article

Comparison between traction electrical motors based on the working of a ten years old light rail transitPESSINA, G; GIRAUDI, P.IEE conference publication. 1998, pp 31-35, issn 0537-9989, isbn 0-85296-703-9Conference Paper

Cryogenic behavior of low-noise monolithic preamplifiers using a JFET as a front-end elementCITTERIO, M; MANFREDI, P. F.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.155-Pr3.159, issn 1155-4339Conference Paper

Development of cryogenic Ge JFETsWARD, R. R; KIRSCHMAN, R. K; JHABVALA et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.123-Pr3.126, issn 1155-4339Conference Paper

Effects induced by electron beam irradiation on the properties of Y₁Ba₂Cu₃O_7-x biepitaxial Josephson junctionsTAFURI, F; NADGORNY, B; SHOKHOR, S et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.289-Pr3.292, issn 1155-4339Conference Paper

Electron impact-ionization effects in UHV/CVD SiGe HBT's in the temperature range of 300 to 83 KNIU, G; GOGINENI, U; CRESSLER, J. D et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.103-Pr3.107, issn 1155-4339Conference Paper

Noise of high-Tc superconducting films and bolometersKHREBTOV, I. A; LEONOV, V. N; LAUKEMPER, J. K et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.293-Pr3.296, issn 1155-4339Conference Paper

Performance of a SQUID read-out system for superconducting tunnel junctionsMARTIN, D. D. E; PEACOCK, A.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.225-Pr3.228, issn 1155-4339Conference Paper

Perspectives of the cryo-electronics for the year 2000GUTIERREZ-D., E. A; CLAEYS, C; SIMOEN, E et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.315-Pr3.320, issn 1155-4339Conference Paper

Resonance of low-frequency collective plasma oscillations at phase-slip centersCHURILOV, G. E.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.301-Pr3.304, issn 1155-4339Conference Paper

Temperature dependence of hot-carrier effects in 0.2 μm N- and P-channel fully-depleted unibond MOSFETsRENN, S. H; RAYNAUD, C; BALESTRA, F et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.13-Pr3.16, issn 1155-4339Conference Paper

The temperature influence of substrate current in submicron N-channel MOSFETsCHEN, S.-H; CHEN, S.-L; CHUNG, S.-T et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.53-Pr3.56, issn 1155-4339Conference Paper

Cryogenic ASICs in GaAs for applications with particle detectorsCAMIN, D. V; PESSINA, G.Journal de physique. IV. 1996, Vol 6, Num 3, pp C3.225-C3.230, issn 1155-4339Conference Paper

Observation of reversible collapse phenomena in GaAs MESFETs at cryogenic temperaturesCAMIN, D. V; PESSINA, G; PREVITALI, E et al.Electronics Letters. 1991, Vol 27, Num 24, pp 2297-2298, issn 0013-5194Article

Improvements in dynamic and 1/f noise performances of GaAs MESFETs at cryogenic temperatures by using a monolithic processCAMIN, D. V; PESSINA, G; PREVITALI, E et al.IEEE transactions on nuclear science. 1993, Vol 40, Num 4, pp 759-763, issn 0018-9499Conference Paper

Voltage-sensitive differential input preamplifier with outstanding noise performancesCAMIN, D. V; PESSINA, G; MANFREDI, P. F et al.Alta frequenza. 1987, Vol 56, Num 8, pp 347-351, issn 0002-6557Article

A next-generation neutrinoless double beta decay experiment based on ZnMoO4 scintillating bolometersBEEMAN, J. W; DANEVICH, F. A; PESSINA, G et al.Physics letters. Section B. 2012, Vol 710, Num 2, pp 318-323, issn 0370-2693, 6 p.Article

New limit on the neutrinoless ββ decay of ¹³⁰TeAMABOLDI, C; ARTUSA, D. R; CARBONE, L et al.Physical review letters. 2005, Vol 95, Num 14, pp 142501.1-142501.4, issn 0031-9007Article

A thorough analysis of self-heating effects for SOI MOSFETs on SIMOX and UNIBOND substratesJOMAAH, J; RAULY, E; GHIBAUDO, G et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.17-Pr3.20, issn 1155-4339Conference Paper

Back gate voltage and buried-oxide thickness influences on the series resistance of fully depleted SOI MOSFETS at 77 KNICOLETT, A. S; MARTINO, J. A; SIMOEN, E et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.25-Pr3.28, issn 1155-4339Conference Paper

Design of cryogenic electronics packaging for commercial productionKNAUTH, J. P; WHEATLEY, R. W.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.201-Pr3.204, issn 1155-4339Conference Paper